IRL3716S

IRL3716SPBF vs IRL3716S vs IRL3716STRLPBF

 
PartNumberIRL3716SPBFIRL3716SIRL3716STRLPBF
DescriptionMOSFET 20V 1 N-CH HEXFET 4mOhms 53nCMOSFET N-CH 20V 180A D2PAKMOSFET N-CH 20V 180A D2PAK
ManufacturerInfineonIR-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current180 A--
Rds On Drain Source Resistance4.8 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge53 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation210 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
TypeSmps MOSFET--
Width6.22 mm--
BrandInfineon / IR--
Fall Time36 ns--
Product TypeMOSFET--
Rise Time140 ns--
Factory Pack Quantity3200--
SubcategoryMOSFETs--
Typical Turn Off Delay Time38 ns--
Typical Turn On Delay Time18 ns--
Part # AliasesSP001568304--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRL3716SPBF MOSFET 20V 1 N-CH HEXFET 4mOhms 53nC
Infineon Technologies
Infineon Technologies
IRL3716S MOSFET N-CH 20V 180A D2PAK
IRL3716SPBF MOSFET N-CH 20V 180A D2PAK
IRL3716STRLPBF MOSFET N-CH 20V 180A D2PAK
IRL3716STRRPBF MOSFET N-CH 20V 180A D2PAK
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