| PartNumber | IRL40B215 | IRL40B212 | IRL40B209 |
| Description | MOSFET 40V, 120A, 2.7 mOhm 56 nC Qg, Logic Lvl | MOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl | MOSFET 40V, 195A, 1.25 mOhm 180 nC Qg, Logic Lvl |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
| Id Continuous Drain Current | 164 A | 254 A | 414 A |
| Rds On Drain Source Resistance | 3.5 mOhms | 2.4 mOhms | 1.6 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | 1 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 56 nC | 91 nC | 180 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 143 W | 231 W | 375 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | StrongIRFET | StrongIRFET | StrongIRFET |
| Packaging | Tube | Tube | Tube |
| Height | 15.65 mm | 15.65 mm | 15.65 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Width | 4.4 mm | 4.4 mm | 4.4 mm |
| Brand | Infineon Technologies | Infineon / IR | Infineon Technologies |
| Forward Transconductance Min | 176 S | 256 S | 270 S |
| Fall Time | 62 ns | 84 ns | 150 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 110 ns | 154 ns | 198 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 63 ns | 88 ns | 188 ns |
| Typical Turn On Delay Time | 21 ns | 39 ns | 56 ns |
| Part # Aliases | SP001558684 | SP001578760 | SP001576458 |
| Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |