IRL520NS

IRL520NSPBF vs IRL520NS vs IRL520NSTRL

 
PartNumberIRL520NSPBFIRL520NSIRL520NSTRL
DescriptionMOSFET 100V 1 N-CH HEXFET 180mOhms 13.3nCMOSFET N-CH 100V 10A D2PAKMOSFET N-CH 100V 10A D2PAK
ManufacturerInfineonIRIR
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current10 A--
Rds On Drain Source Resistance180 mOhms--
Vgs Gate Source Voltage16 V--
Qg Gate Charge13.3 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation3.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
TypeHEXFET Power MOSFET--
Width6.22 mm--
BrandInfineon Technologies--
Fall Time22 ns--
Product TypeMOSFET--
Rise Time35 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23 ns--
Typical Turn On Delay Time4 ns--
Part # AliasesSP001568426--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRL520NSTRLPBF MOSFET MOSFT 100V 10A 180mOhm 13.3nC LogLv
IRL520NSTRR MOSFET N-CH 100V 10A D2PAK
IRL520NSPBF IGBT Transistors MOSFET 100V 1 N-CH HEXFET 180mOhms 13.3nC
IRL520NS MOSFET N-CH 100V 10A D2PAK
IRL520NSTRL MOSFET N-CH 100V 10A D2PAK
IRL520NSTRLPBF MOSFET N-CH 100V 10A D2PAK
Infineon Technologies
Infineon Technologies
IRL520NSPBF MOSFET 100V 1 N-CH HEXFET 180mOhms 13.3nC
IRL520NSTRLPBF-CUT TAPE New and Original
IRL520NS,L520NS New and Original
IRL520NS/S New and Original
IRL520NSTRPBF New and Original
IRL520NSTRRPBF New and Original
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