IRL60

IRL60B216 vs IRL60HS118 vs IRL60S216

 
PartNumberIRL60B216IRL60HS118IRL60S216
DescriptionMOSFET 60V, 195A, 1.9 mOhm 172 nC Qg, Logic LvlMOSFET DIFFERENTIATED MOSFETSMOSFET N-CH 60V 195A
ManufacturerInfineonInfineonInternational Rectifier
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleSMD/SMT-
Package / CaseTO-220-3PQFN-6-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current305 A18.5 A-
Rds On Drain Source Resistance2.2 mOhms13.3 mOhms-
Vgs th Gate Source Threshold Voltage1 V1.1 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge172 nC8 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation375 W2.5 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameStrongIRFETOptiMOS-
PackagingTubeReel-
Height15.65 mm--
Length10 mm--
Width4.4 mm--
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min264 S17 S-
Fall Time120 ns5 ns-
Product TypeMOSFETMOSFET-
Rise Time185 ns21 ns-
Factory Pack Quantity10004000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time190 ns9 ns-
Typical Turn On Delay Time70 ns8.4 ns-
Part # AliasesSP001568416SP001592258-
Unit Weight0.211644 oz--
Series-OptiMOS 5-
Transistor Type-1 N-Channel-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRL60B216 MOSFET 60V, 195A, 1.9 mOhm 172 nC Qg, Logic Lvl
IRL60SL216 MOSFET N-CH 60V 195A
IRL60B216 MOSFET N-CH 60V 195A
IRL60HS118 MOSFET N-CH 60V 18.5A 6PQFN
IRL60S216 MOSFET N-CH 60V 195A
Infineon Technologies
Infineon Technologies
IRL60HS118 MOSFET DIFFERENTIATED MOSFETS
IRL60DL238 TRENCH MOSFETS DESIGNIN - Tape and Reel (Alt: IRL60DL238)
IRL60B216PBF New and Original
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