PartNumber | IRL60B216 | IRL60HS118 | IRL60S216 |
Description | MOSFET 60V, 195A, 1.9 mOhm 172 nC Qg, Logic Lvl | MOSFET DIFFERENTIATED MOSFETS | MOSFET N-CH 60V 195A |
Manufacturer | Infineon | Infineon | International Rectifier |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | SMD/SMT | - |
Package / Case | TO-220-3 | PQFN-6 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 305 A | 18.5 A | - |
Rds On Drain Source Resistance | 2.2 mOhms | 13.3 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1 V | 1.1 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 172 nC | 8 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 375 W | 2.5 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | StrongIRFET | OptiMOS | - |
Packaging | Tube | Reel | - |
Height | 15.65 mm | - | - |
Length | 10 mm | - | - |
Width | 4.4 mm | - | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 264 S | 17 S | - |
Fall Time | 120 ns | 5 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 185 ns | 21 ns | - |
Factory Pack Quantity | 1000 | 4000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 190 ns | 9 ns | - |
Typical Turn On Delay Time | 70 ns | 8.4 ns | - |
Part # Aliases | SP001568416 | SP001592258 | - |
Unit Weight | 0.211644 oz | - | - |
Series | - | OptiMOS 5 | - |
Transistor Type | - | 1 N-Channel | - |