PartNumber | IRLL014N | IRLL014NNTRPBF | IRLL014NP |
Description | MOSFET Transistor, N-Channel, SOT-223 | ||
Manufacturer | IR | - | IR |
Product Category | FETs - Single | - | FETs - Single |
Packaging | - | - | Tube |
Unit Weight | - | - | 0.006632 oz |
Mounting Style | - | - | SMD/SMT |
Package Case | - | - | SOT-223-4 |
Technology | - | - | Si |
Number of Channels | - | - | 1 Channel |
Configuration | - | - | Single |
Transistor Type | - | - | 1 N-Channel |
Pd Power Dissipation | - | - | 2.1 W |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 2.9 ns |
Rise Time | - | - | 4.9 ns |
Vgs Gate Source Voltage | - | - | 16 V |
Id Continuous Drain Current | - | - | 2 A |
Vds Drain Source Breakdown Voltage | - | - | 55 V |
Vgs th Gate Source Threshold Voltage | - | - | 2 V |
Rds On Drain Source Resistance | - | - | 140 mOhms |
Transistor Polarity | - | - | N-Channel |
Typical Turn Off Delay Time | - | - | 14 ns |
Typical Turn On Delay Time | - | - | 5.1 ns |
Qg Gate Charge | - | - | 9.5 nC |
Forward Transconductance Min | - | - | 2.3 S |
Channel Mode | - | - | Enhancement |