PartNumber | IRLML0030TRPBF | IRLML0030GTRPBF | IRLML0030TRPB |
Description | MOSFET MOSFT 30V 5.2A 28mOhm 3.6nC Qg | ||
Manufacturer | Infineon | IR | IR |
Product Category | MOSFET | IC Chips | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | SOT-23-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 5.3 A | - | - |
Rds On Drain Source Resistance | 27 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.3 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 2.6 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 1.3 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | Digi-ReelR Alternate Packaging |
Height | 1.1 mm | - | - |
Length | 2.9 mm | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 1.3 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 9.5 s | - | - |
Fall Time | 4.4 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 4.4 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 7.4 ns | - | - |
Typical Turn On Delay Time | 5.2 ns | - | - |
Part # Aliases | SP001568604 | - | - |
Unit Weight | 0.001482 oz | - | 0.050717 oz |
Series | - | - | HEXFETR |
Package Case | - | - | TO-236-3, SC-59, SOT-23-3 |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | Micro3/SOT-23 |
FET Type | - | - | MOSFET N-Channel, Metal Oxide |
Power Max | - | - | 1.3W |
Drain to Source Voltage Vdss | - | - | 30V |
Input Capacitance Ciss Vds | - | - | 382pF @ 15V |
FET Feature | - | - | Standard |
Current Continuous Drain Id 25°C | - | - | 5.3A (Ta) |
Rds On Max Id Vgs | - | - | 27 mOhm @ 5.2A, 10V |
Vgs th Max Id | - | - | 2.3V @ 25μA |
Gate Charge Qg Vgs | - | - | 2.6nC @ 4.5V |
Pd Power Dissipation | - | - | 1.3 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 5.3 A |
Vds Drain Source Breakdown Voltage | - | - | 30 V |
Rds On Drain Source Resistance | - | - | 40 mOhms |
Qg Gate Charge | - | - | 2.6 nC |