PartNumber | IRLML6346 | IRLML6346GTRPBF | IRLML6346TRP |
Description | |||
Manufacturer | Infineon Technologies | - | Infineon Technologies |
Product Category | FETs - Single | - | FETs - Single |
Series | HEXFETR | - | HEXFETR |
Packaging | Digi-ReelR Alternate Packaging | - | Digi-ReelR Alternate Packaging |
Unit Weight | 0.050717 oz | - | 0.050717 oz |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package Case | TO-236-3, SC-59, SOT-23-3 | - | TO-236-3, SC-59, SOT-23-3 |
Technology | Si | - | Si |
Operating Temperature | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | - | Surface Mount |
Number of Channels | 1 Channel | - | 1 Channel |
Supplier Device Package | Micro3/SOT-23 | - | Micro3/SOT-23 |
FET Type | MOSFET N-Channel, Metal Oxide | - | MOSFET N-Channel, Metal Oxide |
Power Max | 1.3W | - | 1.3W |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Drain to Source Voltage Vdss | 30V | - | 30V |
Input Capacitance Ciss Vds | 270pF @ 24V | - | 270pF @ 24V |
FET Feature | Standard | - | Standard |
Current Continuous Drain Id 25°C | 3.4A (Ta) | - | 3.4A (Ta) |
Rds On Max Id Vgs | 63 mOhm @ 3.4A, 4.5V | - | 63 mOhm @ 3.4A, 4.5V |
Vgs th Max Id | 1.1V @ 10μA | - | 1.1V @ 10μA |
Gate Charge Qg Vgs | 2.9nC @ 4.5V | - | 2.9nC @ 4.5V |
Pd Power Dissipation | 1.3 W | - | 1.3 W |
Vgs Gate Source Voltage | 12 V | - | 12 V |
Id Continuous Drain Current | 3.4 A | - | 3.4 A |
Vds Drain Source Breakdown Voltage | 30 V | - | 30 V |
Rds On Drain Source Resistance | 63 mOhms | - | 63 mOhms |
Transistor Polarity | N-Channel | - | N-Channel |
Qg Gate Charge | 2.9 nC | - | 2.9 nC |