| PartNumber | IRLR024PBF | IRLR024NTRRPBF | IRLR024TR |
| Description | MOSFET RECOMMENDED ALT 844-IRLR024 | MOSFET 55V 1 N-CH HEXFET 65mOhms 10nC | MOSFET RECOMMENDED ALT 844-IRLR024TRPBF |
| Manufacturer | Vishay | Infineon | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | N |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Packaging | Tube | Reel | Reel |
| Height | 2.38 mm | 2.3 mm | 2.38 mm |
| Length | 6.73 mm | 6.5 mm | 6.73 mm |
| Width | 6.22 mm | 6.22 mm | 6.22 mm |
| Brand | Vishay / Siliconix | Infineon / IR | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 2000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.050717 oz | 0.139332 oz | 0.050717 oz |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 55 V | - |
| Id Continuous Drain Current | - | 17 A | - |
| Rds On Drain Source Resistance | - | 110 mOhms | - |
| Vgs Gate Source Voltage | - | 16 V | - |
| Qg Gate Charge | - | 10 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 38 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Type | - | HEXFET Power MOSFET | - |
| Fall Time | - | 29 ns | - |
| Rise Time | - | 74 ns | - |
| Typical Turn Off Delay Time | - | 20 ns | - |
| Typical Turn On Delay Time | - | 7.1 ns | - |
| Part # Aliases | - | SP001553142 | - |