IRLR024NTRR

IRLR024NTRRPBF vs IRLR024NTRR vs IRLR024NTRRPBF-EL

 
PartNumberIRLR024NTRRPBFIRLR024NTRRIRLR024NTRRPBF-EL
DescriptionMOSFET 55V 1 N-CH HEXFET 65mOhms 10nCMOSFET N-CH 55V 17A DPAKTrans MOSFET N-CH 55V 17A 3-Pin(2+Tab) DPAK T/R (Alt: SP001553142)
ManufacturerInfineonIR-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current17 A--
Rds On Drain Source Resistance110 mOhms--
Vgs Gate Source Voltage16 V--
Qg Gate Charge10 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation38 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel1 N-Channel-
TypeHEXFET Power MOSFET--
Width6.22 mm--
BrandInfineon / IR--
Fall Time29 ns29 ns-
Product TypeMOSFET--
Rise Time74 ns74 ns-
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns20 ns-
Typical Turn On Delay Time7.1 ns7.1 ns-
Part # AliasesSP001553142--
Unit Weight0.139332 oz0.139332 oz-
Package Case-TO-252-3-
Pd Power Dissipation-38 W-
Vgs Gate Source Voltage-16 V-
Id Continuous Drain Current-17 A-
Vds Drain Source Breakdown Voltage-55 V-
Rds On Drain Source Resistance-110 mOhms-
Qg Gate Charge-10 nC-
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRLR024NTRRPBF MOSFET 55V 1 N-CH HEXFET 65mOhms 10nC
Infineon Technologies
Infineon Technologies
IRLR024NTRR MOSFET N-CH 55V 17A DPAK
IRLR024NTRRPBF RF Bipolar Transistors MOSFET 55V 1 N-CH HEXFET 65mOhms 10nC
IRLR024NTRRPBF-EL Trans MOSFET N-CH 55V 17A 3-Pin(2+Tab) DPAK T/R (Alt: SP001553142)
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