 | |  | |
| PartNumber | IRLR3110ZTRPBF | IRLR3110ZTRLPBF | IRLR3110ZPBF |
| Description | MOSFET 100V HEXFET 14mOhms 15nC | MOSFET MOSFT 100V 63A 14mOhm 34nC Log Lvl | MOSFET N-CH 100V 42A DPAK |
| Manufacturer | Infineon | Infineon | IR |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 63 A | 63 A | - |
| Rds On Drain Source Resistance | 12 mOhms | 14 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | - |
| Vgs Gate Source Voltage | 16 V | - | - |
| Qg Gate Charge | 34 nC | 48 nC | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 140 W | 140 W | - |
| Configuration | Single | Single | Single |
| Packaging | Reel | Reel | Tube |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon / IR | Infineon Technologies | - |
| Forward Transconductance Min | 52 S | 52 S | - |
| Fall Time | 48 ns | 48 ns | 48 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 110 ns | 110 ns | 110 ns |
| Factory Pack Quantity | 2000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 33 ns | - | 33 ns |
| Typical Turn On Delay Time | 24 ns | - | 24 ns |
| Part # Aliases | SP001574010 | SP001578848 | - |
| Unit Weight | 0.014110 oz | 0.139332 oz | 0.139332 oz |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 140 W |
| Vgs Gate Source Voltage | - | - | 16 V |
| Id Continuous Drain Current | - | - | 63 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2.5 V |
| Rds On Drain Source Resistance | - | - | 16 mOhms |
| Qg Gate Charge | - | - | 34 nC |
| Forward Transconductance Min | - | - | 52 S |
| Channel Mode | - | - | Enhancement |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon / IR |
IRLR3110ZTRPBF | MOSFET 100V HEXFET 14mOhms 15nC | |
Infineon Technologies |
IRLR3110ZTRLPBF | MOSFET MOSFT 100V 63A 14mOhm 34nC Log Lvl | |
| IRLR3110ZTRRPBF | MOSFET 100V HEXFET 14mOhms 15nC | ||
| IRLR3110ZPBF | MOSFET N-CH 100V 42A DPAK | ||
| IRLR3110ZTRLPBF | MOSFET N-CH 100V 42A DPAK | ||
| IRLR3110ZTRPBF | MOSFET N-CH 100V 42A DPAK | ||
| IRLR3110ZTRRPBF | RF Bipolar Transistors MOSFET 100V HEXFET 14mOhms 15nC | ||
| IRLR3110Z | New and Original | ||
| IRLR3110ZTRPBF. | New and Original | ||
| IRLR3110ZTRPBF-CUT TAPE | New and Original |