IRLR3636T

IRLR3636TRPBF vs IRLR3636TRLPBF

 
PartNumberIRLR3636TRPBFIRLR3636TRLPBF
DescriptionMOSFET 60V 1 N-CH HEXFET 6.8mOhms 33nCMOSFET MOSFT 60V 99A 6.8mOhm 33nC Log Lvl
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V
Id Continuous Drain Current99 A99 A
Rds On Drain Source Resistance6.8 mOhms6.8 mOhms
Vgs th Gate Source Threshold Voltage2.5 V2.5 V
Vgs Gate Source Voltage16 V-
Qg Gate Charge33 nC49 nC
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation143 W143 W
ConfigurationSingleSingle
Channel ModeEnhancement-
PackagingReelReel
Height2.3 mm2.3 mm
Length6.5 mm6.5 mm
Transistor Type1 N-Channel1 N-Channel
Width6.22 mm6.22 mm
BrandInfineon TechnologiesInfineon / IR
Forward Transconductance Min31 S31 S
Fall Time69 ns69 ns
Product TypeMOSFETMOSFET
Rise Time216 ns216 ns
Factory Pack Quantity20003000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time43 ns-
Typical Turn On Delay Time45 ns-
Part # AliasesSP001574002SP001569134
Unit Weight0.139332 oz0.139332 oz
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRLR3636TRPBF MOSFET 60V 1 N-CH HEXFET 6.8mOhms 33nC
IRLR3636TRPBF MOSFET N-CH 60V 50A DPAK
IRLR3636TRLPBF RF Bipolar Transistors MOSFET MOSFT 60V 99A 6.8mOhm 33nC Log Lvl
Infineon / IR
Infineon / IR
IRLR3636TRLPBF MOSFET MOSFT 60V 99A 6.8mOhm 33nC Log Lvl
IRLR3636TRPBF,IRLR3636PB New and Original
IRLR3636TRRPBF New and Original
IRLR3636TRPBF-CUT TAPE New and Original
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