 | |  | |
| PartNumber | IRLR3717TRPBF | IRLR3717TRLPBF | IRLR3717PBF |
| Description | MOSFET 20V 1 N-CH HEXFET 4.2mOhms 21nC | MOSFET MOSFT 20V 120A 21nC 4.2mOhm Qg log lvl | MOSFET N-CH 20V 120A DPAK |
| Manufacturer | Infineon | Infineon | IR |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
| Id Continuous Drain Current | 120 A | 120 A | - |
| Rds On Drain Source Resistance | 5.7 mOhms | 4 mOhms | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 21 nC | 31 nC | - |
| Pd Power Dissipation | 89 W | 89 W | - |
| Configuration | Single | Single | Single |
| Packaging | Reel | Reel | Tube |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon / IR | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SP001553200 | SP001567384 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Vgs th Gate Source Threshold Voltage | - | 2.45 V | - |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Forward Transconductance Min | - | 49 S | - |
| Fall Time | - | 16 ns | 16 ns |
| Rise Time | - | 14 ns | 14 ns |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 89 W |
| Minimum Operating Temperature | - | - | - 55 C |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 120 A |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1.55 V to 2.45 V |
| Rds On Drain Source Resistance | - | - | 5.7 mOhms |
| Typical Turn Off Delay Time | - | - | 5.8 ns |
| Typical Turn On Delay Time | - | - | 14 ns |
| Qg Gate Charge | - | - | 21 nC |
| Forward Transconductance Min | - | - | 49 S |
| Channel Mode | - | - | Enhancement |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IRLR3717TRPBF | MOSFET 20V 1 N-CH HEXFET 4.2mOhms 21nC | |
| IRLR3717TRRPBF | MOSFET 20V 1 N-CH HEXFET 4.2mOhms 21nC | ||
| IRLR3717PBF | MOSFET N-CH 20V 120A DPAK | ||
| IRLR3717TRLPBF | MOSFET N-CH 20V 120A DPAK | ||
| IRLR3717TRRPBF | RF Bipolar Transistors MOSFET 20V 1 N-CH HEXFET 4.2mOhms 21nC | ||
| IRLR3717TRPBF | RF Bipolar Transistors MOSFET 20V 1 N-CH HEXFET 4.2mOhms 21nC | ||
Infineon / IR |
IRLR3717TRLPBF | MOSFET MOSFT 20V 120A 21nC 4.2mOhm Qg log lvl | |
| IRLR3717 | New and Original | ||
| IRLR3717 LU3717 | New and Original | ||
| IRLR3717TRPBF. | Continuous Drain Current Id:120A, Drain Source Voltage Vds:20V, Automotive Qualification Standard:- RoHS Compliant: Yes |