PartNumber | IRLR3915TRPBF | IRLR3915PBF |
Description | MOSFET MOSFT 55V 61A 14mOhm 61nC Log Lvl | MOSFET 55V 1 N-CH HEXFET 14mOhms 61nC |
Manufacturer | Infineon | Infineon |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 55 V | 55 V |
Id Continuous Drain Current | 61 A | 61 A |
Rds On Drain Source Resistance | 14 mOhms | 17 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | 3 V |
Qg Gate Charge | 92 nC | 61 nC |
Maximum Operating Temperature | + 175 C | + 175 C |
Pd Power Dissipation | 120 W | 120 W |
Configuration | Single | Single |
Packaging | Reel | Tube |
Height | 2.3 mm | 2.3 mm |
Length | 6.5 mm | 6.5 mm |
Transistor Type | 1 N-Channel | 1 N-Channel |
Width | 6.22 mm | 6.22 mm |
Brand | Infineon Technologies | Infineon / IR |
Forward Transconductance Min | 42 S | 42 S |
Fall Time | 100 ns | 100 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 51 ns | 51 ns |
Factory Pack Quantity | 2000 | 3000 |
Subcategory | MOSFETs | MOSFETs |
Part # Aliases | SP001558938 | SP001558466 |
Unit Weight | 0.139332 oz | 0.139332 oz |
Vgs Gate Source Voltage | - | 16 V |
Minimum Operating Temperature | - | - 55 C |
Channel Mode | - | Enhancement |
Type | - | HEXFET Power MOSFET |
Typical Turn Off Delay Time | - | 83 ns |
Typical Turn On Delay Time | - | 7.4 ns |