IRLR8726TRP

IRLR8726TRPBF vs IRLR8726TRPB vs IRLR8726TRPBF,LR8726,IRL

 
PartNumberIRLR8726TRPBFIRLR8726TRPBIRLR8726TRPBF,LR8726,IRL
DescriptionMOSFET 30V 1 N-CH HEXFET 5.8mOhms 15nC
ManufacturerInfineonIR-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current86 A--
Rds On Drain Source Resistance8 mOhms--
Vgs th Gate Source Threshold Voltage2.35 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge15 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation75 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel1 N-Channel-
TypeHEXFET Power MOSFET--
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min73 S--
Fall Time16 ns16 ns-
Product TypeMOSFET--
Rise Time49 ns49 ns-
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns15 ns-
Typical Turn On Delay Time12 ns12 ns-
Part # AliasesSP001573108--
Unit Weight0.018695 oz0.139332 oz-
Package Case-TO-252-3-
Pd Power Dissipation-75 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-86 A-
Vds Drain Source Breakdown Voltage-30 V-
Vgs th Gate Source Threshold Voltage-1.35 V to 2.35 V-
Rds On Drain Source Resistance-8 mOhms-
Qg Gate Charge-15 nC-
Forward Transconductance Min-73 S-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRLR8726TRPBF MOSFET 30V 1 N-CH HEXFET 5.8mOhms 15nC
IRLR8726TRPBF MOSFET N-CH 30V 86A DPAK
IRLR8726TRPB New and Original
IRLR8726TRPBF,LR8726,IRL New and Original
IRLR8726TRPBF. New and Original
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