 | | |
| PartNumber | IRLS3813TRLPBF | IRLS3813PBF |
| Description | MOSFET 30V Single N-Channel HEXFET | MOSFET 30V Single N-Channel HEXFET |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 247 A | 160 A |
| Rds On Drain Source Resistance | 1.95 mOhms | 1.6 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.35 V | 2.35 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 55 nC | 55 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 195 W | 195 W |
| Configuration | Single | Single |
| Packaging | Reel | Tube |
| Height | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon / IR |
| Forward Transconductance Min | 428 S | 428 S |
| Fall Time | 102 ns | 102 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 202 ns | 202 ns |
| Factory Pack Quantity | 800 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 33 ns | 33 ns |
| Typical Turn On Delay Time | 32 ns | 32 ns |
| Part # Aliases | SP001573098 | SP001576946 |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IRLS3813TRLPBF | MOSFET 30V Single N-Channel HEXFET | |
| IRLS3813TRLPBF | MOSFET N-CH 30V 160A D2PAK | ||
| IRLS3813PBF | Darlington Transistors MOSFET 30V Single N-Channel HEXFET | ||
Infineon / IR |
IRLS3813PBF | MOSFET 30V Single N-Channel HEXFET | |
| IRLS3813 | New and Original | ||
| IRLS3813 LS3813 | New and Original |