IRLW

IRLW510ATM vs IRLW510A vs IRLW520A

 
PartNumberIRLW510ATMIRLW510AIRLW520A
DescriptionMOSFET 100V N-Channel a-FET Logic Level
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current5.6 A--
Rds On Drain Source Resistance440 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation3.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min10.2 S--
Fall Time8 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time17 ns--
Typical Turn On Delay Time8 ns--
Unit Weight0.011640 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
IRLW630ATM MOSFET 200V N-Channel a-FET Logic Level
IRLW510ATM MOSFET 100V N-Channel a-FET Logic Level
IRLW510A New and Original
IRLW520A New and Original
IRLW520ATM MOSFET 100V N-Channel a-FET Logic Level
IRLW530A New and Original
IRLW530ATM Power Field-Effect Transistor, 14A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IRLW540A New and Original
IRLW610A New and Original
IRLW620ATM New and Original
IRLW630A New and Original
IRLW630ATM F630NS New and Original
IRLW630ATRRPBF New and Original
IRLW640A New and Original
IRLWI520A New and Original
IRLWI620A New and Original
IRLWZ44ATM New and Original
ON Semiconductor
ON Semiconductor
IRLW510ATM MOSFET N-CH 100V 5.6A I2PAK
IRLW630ATM MOSFET N-CH 200V 9A I2PAK
IRLW610ATM MOSFET N-CH 200V 3.3A I2PAK
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