IS49NLS96400-3

IS49NLS96400-33BL vs IS49NLS96400-33BI vs IS49NLS96400-33B

 
PartNumberIS49NLS96400-33BLIS49NLS96400-33BIIS49NLS96400-33B
DescriptionDRAM 576Mbit x9 Separate I/O 300MHz RLDRAM2DRAM 576Mbit x9 Separate I/O 300MHz Leaded ITDRAM 576Mbit x9 Separate I/O 300MHz Leaded
ManufacturerISSIISSIISSI
Product CategoryDRAMDRAMDRAM
RoHSYNN
TypeRLDRAM2RLDRAM2RLDRAM2
Data Bus Width9 bit9 bit9 bit
Organization64 M x 964 M x 964 M x 9
Package / CaseBGA-144BGA-144BGA-144
Memory Size576 Mbit576 Mbit576 Mbit
Maximum Clock Frequency300 MHz300 MHz300 MHz
Access Time3.3 ns3.3 ns3.3 ns
Supply Voltage Max2.63 V1.9 V1.9 V
Supply Voltage Min2.38 V1.7 V1.7 V
Supply Current Max368 mA368 mA368 mA
Minimum Operating Temperature0 C- 40 C0 C
Maximum Operating Temperature+ 70 C+ 85 C+ 70 C
SeriesIS49NLS96400IS49NLS96400IS49NLS96400
PackagingTrayTrayTray
BrandISSIISSIISSI
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Moisture SensitiveYesYesYes
Operating Supply Voltage1.8 V1.8 V1.8 V
Product TypeDRAMDRAMDRAM
Factory Pack Quantity104104104
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
TradenameRLDRAM2RLDRAM2RLDRAM2
Unit Weight0.015757 oz0.015757 oz0.015757 oz
Manufacturer Part # Description RFQ
ISSI
ISSI
IS49NLS96400-33BL DRAM 576Mbit x9 Separate I/O 300MHz RLDRAM2
IS49NLS96400-33BI DRAM 576Mbit x9 Separate I/O 300MHz Leaded IT
IS49NLS96400-33B DRAM 576Mbit x9 Separate I/O 300MHz Leaded
IS49NLS96400-33BLI DRAM 576Mbit x9 Separate I/O 300MHz RLDRAM2
IS49NLS96400-33BI DRAM 576Mbit x9 Separate I/O 300MHz Leaded IT
IS49NLS96400-33B DRAM 576Mbit x9 Separate I/O 300MHz Leaded
IS49NLS96400-33BLI DRAM 576Mbit x9 Separate I/O 300MHz RLDRAM2
IS49NLS96400-33BL DRAM 576Mbit x9 Separate I/O 300MHz RLDRAM2
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