PartNumber | IS61WV12816EDBLL-10TLI | IS61WV12816EFBLL-10TLI | IS61WV12816EDBLL-10TLI-TR |
Description | SRAM 2Mb (128K x 16) 10ns 2.4V-3.6V Async SRAM | SRAM 2Mb,High-Speed,Async with ECC,128K x 16,10ns,2.4V-3.6V, 44 Pin TSOP II, RoHS | SRAM 2Mb (128K x 16) 10ns 2.4V-3.6V Async |
Manufacturer | ISSI | ISSI | ISSI |
Product Category | SRAM | SRAM | SRAM |
RoHS | Y | Y | Y |
Memory Size | 2 Mbit | 2 Mbit | 2 Mbit |
Organization | 128 k x 16 | 128 K x 16 | 128 k x 16 |
Access Time | 10 ns | 10 ns | 10 ns |
Interface Type | Parallel | - | Parallel |
Supply Voltage Max | 3.6 V | 3.6 V | 3.6 V |
Supply Voltage Min | 2.4 V | 2.4 V | 2.4 V |
Supply Current Max | 35 mA | 35 mA | 35 mA |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 85 C | + 85 C | + 85 C |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TSOP-44 | TSOP-44 | TSOP-44 |
Packaging | Tray | Tray | Reel |
Memory Type | SDR | - | SDR |
Series | IS61WV12816EDBLL | IS61WV12816EFBLL | IS61WV12816EDBLL |
Type | Asynchronous | High-Speed | Asynchronous |
Brand | ISSI | ISSI | ISSI |
Moisture Sensitive | Yes | - | Yes |
Product Type | SRAM | SRAM | SRAM |
Factory Pack Quantity | 135 | 135 | 1000 |
Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |