IS61WV51216E

IS61WV51216EDALL-20BLI vs IS61WV51216EDALL-20TLI vs IS61WV51216EDALL-20BLI-TR

 
PartNumberIS61WV51216EDALL-20BLIIS61WV51216EDALL-20TLIIS61WV51216EDALL-20BLI-TR
DescriptionSRAM 8M (512Kx16) 20ns Async SRAM 1.65-2.2VSRAM 8M (512Kx16) 20ns Async SRAM 1.65-2.2VSRAM 8M (512Kx16) 20ns Async SRAM 1.65-2.2V
ManufacturerISSIISSIISSI
Product CategorySRAMSRAMSRAM
Memory Size8 Mbit8 Mbit8 Mbit
Organization512 k x 16512 k x 16512 k x 16
Access Time20 ns20 ns20 ns
Interface TypeParallelParallelParallel
Supply Voltage Max2.2 V2.2 V2.2 V
Supply Voltage Min1.65 V1.65 V1.65 V
Supply Current Max40 mA40 mA40 mA
Minimum Operating Temperature- 40 C- 40 C- 40 C
Maximum Operating Temperature+ 85 C+ 85 C+ 85 C
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTFBGA-48TSOP-44TFBGA-48
PackagingBulkBulkReel
Memory TypeSRAMSRAMSRAM
SeriesIS61WV51216EDALLIS61WV51216EDALLIS61WV51216EDALL
TypeHigh SpeedHigh SpeedHigh Speed
BrandISSIISSIISSI
Product TypeSRAMSRAMSRAM
Factory Pack Quantity4801352500
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
Manufacturer Part # Description RFQ
ISSI
ISSI
IS61WV51216EEBLL-10TLI-TR SRAM 8M 8,10ns 2.4-3.6V 512Kx16 LP Asyn SRAM
IS61WV51216EEBLL-10BLI SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), RoHS
IS61WV51216EDBLL-8TLI SRAM 8M, 8ns, 2.4-3.6V 512Kx16 Async SRAM
IS61WV51216EDBLL-10TLI SRAM 8M, 2.4-3.6V, 10ns 512Kx16 Asych SRAM
IS61WV51216EDBLL-10BLI SRAM 8M, 2.4-3.6V, 10ns 512Kx16 Asych SRAM
IS61WV51216EDBLL-8BLI SRAM 8M, 8ns, 2.4-3.6V 512Kx16 Async SRAM
IS61WV51216EDALL-20BLI SRAM 8M (512Kx16) 20ns Async SRAM 1.65-2.2V
IS61WV51216EEBLL-10T2LI SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Pin TSOP I, ERR1/2 pins, RoHS
IS61WV51216EEBLL-10B2LI SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), ERR1/2 pins, RoHS
IS61WV51216EDBLL-10BLI-TR SRAM 8M, 2.4-3.6V, 10ns 512Kx16 Asych SRAM
IS61WV51216EEALL-20BLI SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 48 Ball mBGA (6x8 mm), RoHS
IS61WV51216EDBLL-8TLI-TR SRAM 8M, 8ns, 2.4-3.6V 512Kx16 Async SRAM
IS61WV51216EEBLL-10TLI SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,44 Pin TSOP II, RoHS
IS61WV51216EDBLL-10TLI-TR SRAM 8M, 2.4-3.6V, 10ns 512Kx16 Asych SRAM
IS61WV51216EDALL-20TLI SRAM 8M (512Kx16) 20ns Async SRAM 1.65-2.2V
IS61WV51216EEBLL-10BLI-TR SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), RoHS
IS61WV51216EEALL-20BLI-TR SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 48 Ball mBGA (6x8 mm), RoHS
IS61WV51216EDALL-20BLI-TR SRAM 8M (512Kx16) 20ns Async SRAM 1.65-2.2V
IS61WV51216EEALL-20TLI SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 44 Pin TSOP II, RoHS
IS61WV51216EEALL-20TLI-TR SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 44 Pin TSOP II, RoHS
IS61WV51216EEBLL-10T2LI-TR SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Pin TSOP I, ERR1/2 pins, RoHS
IS61WV51216EDALL-20TLI-TR SRAM 8M (512Kx16) 20ns Async SRAM 1.65-2.2V
IS61WV51216EEBLL-10B2LI-TR SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), ERR1/2 pins, RoHS
IS61WV51216EDBLL-8BLI-TR SRAM 8M, 8ns, 2.4-3.6V 512Kx16 Async SRAM
IS61WV51216EDBLL-8BLI SRAM 8M, 8ns, 2.4-3.6V 512Kx16 Async SRAM
IS61WV51216EDBLL-10BLI SRAM 8M, 2.4-3.6V, 10ns 512Kx16 Asych SRAM
IS61WV51216EDBLL-8TLI SRAM 8M, 8ns, 2.4-3.6V 512Kx16 Async SRAM
IS61WV51216EDBLL-10TLI SRAM 8M, 2.4-3.6V, 10ns 512Kx16 Asych SRAM
IS61WV51216EDBLL-10TLI- New and Original
IS61WV51216EDALL-20TLI IC SRAM 8M PARALLEL 44TSOP
IS61WV51216EEBLL-10BLI IC SRAM 8M PARALLEL 48TFBGA
IS61WV51216EEBLL-10TLI IC SRAM 8M PARALLEL 44TSOP II
IS61WV51216EDALL-20BLI IC SRAM 8M PARALLEL 48MGA
IS61WV51216EDBLL10TLI New and Original
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