PartNumber | IS64WV12816EDBLL-10CTLA3 | IS64WV12816EDBLL-10CTLA3-TR | IS64WV12816EDBLL-10CTLA |
Description | SRAM 2Mb,High-Speed,Async,128K x 16,8ns/3.3v, or 10ns/2.4v-3.6v,44 Pin TSOP II, RoHS, Automotive temp, ECC | SRAM 2Mb,High-Speed,Async,128K x 16,8ns/3.3v, or 10ns/2.4v-3.6v,44 Pin TSOP II, RoHS, Automotive temp, ECC | |
Manufacturer | ISSI | ISSI | - |
Product Category | SRAM | SRAM | - |
RoHS | Y | Y | - |
Memory Size | 2 Mbit | 2 Mbit | - |
Organization | 128 k x 16 | 128 k x 16 | - |
Access Time | 10 ns | 10 ns | - |
Interface Type | Parallel | Parallel | - |
Supply Voltage Max | 3.6 V | 3.6 V | - |
Supply Voltage Min | 2.4 V | 2.4 V | - |
Supply Current Max | 50 mA | 50 mA | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 125 C | + 125 C | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TSOP-44 | TSOP-44 | - |
Memory Type | SDR | SDR | - |
Series | IS64WV12816EDBLL | IS64WV12816EDBLL | - |
Type | Asynchronous | Asynchronous | - |
Brand | ISSI | ISSI | - |
Moisture Sensitive | Yes | Yes | - |
Product Type | SRAM | SRAM | - |
Factory Pack Quantity | 135 | 1000 | - |
Subcategory | Memory & Data Storage | Memory & Data Storage | - |
Packaging | - | Reel | - |