IS66WVE2M16EB

IS66WVE2M16EBLL-70BLI vs IS66WVE2M16EBLL-55BLI vs IS66WVE2M16EBLL-55B

 
PartNumberIS66WVE2M16EBLL-70BLIIS66WVE2M16EBLL-55BLIIS66WVE2M16EBLL-55B
DescriptionSRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V~3.6V, VDDQ 2.7V~3.6V,48 Ball BGA (6x8 mm), RoHSSRAM 32Mb,Pseudo SRAM Asynch/Pg 2Mx16 55ns
ManufacturerISSIISSI-
Product CategorySRAMSRAM-
RoHSYY-
Memory Size32 Mbit--
Organization2 M x 16--
Access Time70 ns--
Interface TypeParallel--
Supply Voltage Max3.6 V--
Supply Voltage Min2.7 V--
Supply Current Max30 mA--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 85 C--
Mounting StyleSMD/SMT--
Package / CaseTFBGA-48--
Memory TypeSDR--
SeriesIS66WVE2M16EBLL--
TypeAsynchronous--
BrandISSIISSI-
Moisture SensitiveYes--
Product TypeSRAMSRAM-
Factory Pack Quantity480480-
SubcategoryMemory & Data StorageMemory & Data Storage-
Unit Weight0.003034 oz--
Manufacturer Part # Description RFQ
ISSI
ISSI
IS66WVE2M16EBLL-70BLI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V~3.6V, VDDQ 2.7V~3.6V,48 Ball BGA (6x8 mm), RoHS
IS66WVE2M16EBLL-70BLI-TR SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V~3.6V, VDDQ 2.7V~3.6V,48 Ball BGA (6x8 mm), RoHS
IS66WVE2M16EBLL-55BLI SRAM 32Mb,Pseudo SRAM Asynch/Pg 2Mx16 55ns
IS66WVE2M16EBLL-70BLI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS
IS66WVE2M16EBLL-55BLI SRAM 32Mb,Pseudo SRAM Asynch/Pg 2Mx16 55ns
IS66WVE2M16EBLL-55B New and Original
IS66WVE2M16EBLL70BLI Unclassified
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