IS66WVE4M16EB

IS66WVE4M16EBLL-70BLI vs IS66WVE4M16EBLL-55BLI vs IS66WVE4M16EBLL-70BLI-

 
PartNumberIS66WVE4M16EBLL-70BLIIS66WVE4M16EBLL-55BLIIS66WVE4M16EBLL-70BLI-
DescriptionSRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V~3.6V, VDDQ 2.7V~3.6V,48 Ball BGA (6x8 mm), RoHSSRAM 64Mb Pseudo SRAM Asynch/Pg 4Mx16 55ns
ManufacturerISSIISSI-
Product CategorySRAMSRAM-
RoHSYY-
Memory Size64 Mbit--
Organization4 M x 16--
Access Time70 ns--
Interface TypeParallel--
Supply Voltage Max3.6 V--
Supply Voltage Min2.7 V--
Supply Current Max30 mA--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 85 C--
Mounting StyleSMD/SMT--
Package / CaseTFBGA-48--
Memory TypeSDR--
SeriesIS66WVE4M16EBLLIS66WVE4M16EBLL-
TypeAsynchronous--
BrandISSIISSI-
Moisture SensitiveYesYes-
Product TypeSRAMSRAM-
Factory Pack Quantity480480-
SubcategoryMemory & Data StorageMemory & Data Storage-
Unit Weight0.014110 oz--
Manufacturer Part # Description RFQ
ISSI
ISSI
IS66WVE4M16EBLL-70BLI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V~3.6V, VDDQ 2.7V~3.6V,48 Ball BGA (6x8 mm), RoHS
IS66WVE4M16EBLL-55BLI SRAM 64Mb Pseudo SRAM Asynch/Pg 4Mx16 55ns
IS66WVE4M16EBLL-70BLI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS
IS66WVE4M16EBLL-55BLI SRAM 64Mb Pseudo SRAM Asynch/Pg 4Mx16 55ns
IS66WVE4M16EBLL-70BLI- New and Original
IS66WVE4M16EBLL-70BLI-T New and Original
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