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| PartNumber | IS66WVE4M16EBLL-70BLI | IS66WVE4M16EBLL-55BLI |
| Description | SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V~3.6V, VDDQ 2.7V~3.6V,48 Ball BGA (6x8 mm), RoHS | SRAM 64Mb Pseudo SRAM Asynch/Pg 4Mx16 55ns |
| Manufacturer | ISSI | ISSI |
| Product Category | SRAM | SRAM |
| RoHS | Y | Y |
| Memory Size | 64 Mbit | - |
| Organization | 4 M x 16 | - |
| Access Time | 70 ns | - |
| Interface Type | Parallel | - |
| Supply Voltage Max | 3.6 V | - |
| Supply Voltage Min | 2.7 V | - |
| Supply Current Max | 30 mA | - |
| Minimum Operating Temperature | - 40 C | - |
| Maximum Operating Temperature | + 85 C | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | TFBGA-48 | - |
| Memory Type | SDR | - |
| Series | IS66WVE4M16EBLL | IS66WVE4M16EBLL |
| Type | Asynchronous | - |
| Brand | ISSI | ISSI |
| Moisture Sensitive | Yes | Yes |
| Product Type | SRAM | SRAM |
| Factory Pack Quantity | 480 | 480 |
| Subcategory | Memory & Data Storage | Memory & Data Storage |
| Unit Weight | 0.014110 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ISSI |
IS66WVE4M16EBLL-70BLI | SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V~3.6V, VDDQ 2.7V~3.6V,48 Ball BGA (6x8 mm), RoHS | |
| IS66WVE4M16EBLL-55BLI | SRAM 64Mb Pseudo SRAM Asynch/Pg 4Mx16 55ns | ||
| IS66WVE4M16EBLL-70BLI | SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS | ||
| IS66WVE4M16EBLL-55BLI | SRAM 64Mb Pseudo SRAM Asynch/Pg 4Mx16 55ns | ||
| IS66WVE4M16EBLL-70BLI- | New and Original | ||
| IS66WVE4M16EBLL-70BLI-T | New and Original |