PartNumber | IXBH20N300 | IXBH20N140 | IXBH20N160 |
Description | IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT | TRANSISTOR | |
Manufacturer | IXYS | - | - |
Product Category | IGBT Transistors | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Package / Case | TO-247-3 | - | - |
Mounting Style | Through Hole | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 3 kV | - | - |
Collector Emitter Saturation Voltage | 2.7 V | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Continuous Collector Current at 25 C | 50 A | - | - |
Pd Power Dissipation | 250 W | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | Very High Voltage | - | - |
Packaging | Tube | - | - |
Continuous Collector Current Ic Max | 50 A | - | - |
Height | 21.46 mm | - | - |
Length | 16.26 mm | - | - |
Width | 5.3 mm | - | - |
Brand | IXYS | - | - |
Gate Emitter Leakage Current | +/- 100 nA | - | - |
Product Type | IGBT Transistors | - | - |
Factory Pack Quantity | 30 | - | - |
Subcategory | IGBTs | - | - |
Tradename | BIMOSFET | - | - |
Unit Weight | 0.056438 oz | - | - |