IXBH2

IXBH20N300 vs IXBH20N140 vs IXBH20N160

 
PartNumberIXBH20N300IXBH20N140IXBH20N160
DescriptionIGBT Transistors DISC IGBT BIMSFT-VERYHIVOLTTRANSISTOR
ManufacturerIXYS--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max3 kV--
Collector Emitter Saturation Voltage2.7 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C50 A--
Pd Power Dissipation250 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesVery High Voltage--
PackagingTube--
Continuous Collector Current Ic Max50 A--
Height21.46 mm--
Length16.26 mm--
Width5.3 mm--
BrandIXYS--
Gate Emitter Leakage Current+/- 100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity30--
SubcategoryIGBTs--
TradenameBIMOSFET--
Unit Weight0.056438 oz--
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXBH20N300 IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT
IXBH24N170 IGBT Transistors BIMOSFETS 1700V 60A
IXBH28N170A IGBT Transistors 30Amps 1700V
IXBH20N140 New and Original
IXBH20N160 TRANSISTOR
IXBH20N300 IGBT 3000V 50A 250W TO247
IXBH20N360H New and Original
IXBH20N360HV IGBT 3600V 70A TO-247HV
IXBH2N250 IGBT 2500V 5A 32W TO247
IXBH28N170A IGBT Transistors 30Amps 1700V
IXBH24N170 IGBT Transistors BIMOSFETS 1700V 60A
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