IXBT1

IXBT12N300HV vs IXBT16N170A vs IXBT10N170

 
PartNumberIXBT12N300HVIXBT16N170AIXBT10N170
DescriptionIGBT Transistors DISC IGBT BIMSFT-VERYHIVOLTIGBT Transistors 1700V 16AIGBT Transistors 10 Amps 1700V 2.3 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
Package / CaseTO-268-2TO-268-3TO-268-3
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max3 kV1700 V1.7 kV
Collector Emitter Saturation Voltage2.8 V-3.4 V
Maximum Gate Emitter Voltage20 V20 V20 V
Continuous Collector Current at 25 C30 A-20 A
Pd Power Dissipation160 W150 W140 W
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesVery High VoltageIXBT16N170IXBT10N170
PackagingTubeTubeTube
Continuous Collector Current Ic Max30 A16 A40 A
BrandIXYSIXYSIXYS
Gate Emitter Leakage Current+/- 100 nA-100 nA
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity303030
SubcategoryIGBTsIGBTsIGBTs
TradenameBIMOSFETBIMOSFETBIMOSFET
Unit Weight0.141096 oz0.158733 oz0.158733 oz
Height-5.1 mm5.1 mm
Length-16.05 mm16.05 mm
Width-14 mm14 mm
Operating Temperature Range--- 55 C to + 150 C
Continuous Collector Current--20 A
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXBT12N300HV IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT
IXBT16N170A IGBT Transistors 1700V 16A
IXBT10N170 IGBT Transistors 10 Amps 1700V 2.3 Rds
IXBT16N170AHV IGBT Transistors DISC IGBT BIMOSFET-HIGH VOLT
IXBT12N300 IGBT 3000V 30A 160W TO268
IXBT16N170 New and Original
IXBT12N300HV IGBT 3000V 30A 160W TO268
IXBT16N170AHV IGBT
IXBT10N170 IGBT Transistors 10 Amps 1700V 2.3 Rds
IXBT16N170A IGBT Transistors 1700V 16A
Top