IXBT4

IXBT42N170 vs IXBT42N170-TRL vs IXBT42N170A

 
PartNumberIXBT42N170IXBT42N170-TRLIXBT42N170A
DescriptionIGBT Transistors BIMOSFET 1700V 75AMOSFET IXBT42N170 TRLIGBT 1700V 42A 357W TO268
ManufacturerIXYSIXYSIXYS
Product CategoryIGBT TransistorsMOSFETIGBTs - Single
RoHSYY-
TechnologySi--
Package / CaseTO-268-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1700 V--
Collector Emitter Saturation Voltage2.3 V--
Maximum Gate Emitter Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesIXBT42N170BIMOSFETBIMOSFET
PackagingTubeReelTube
Continuous Collector Current Ic Max75 A--
Height5.1 mm--
Length16.05 mm--
Width14 mm--
BrandIXYSIXYS-
Continuous Collector Current70 A--
Product TypeIGBT TransistorsMOSFET-
Factory Pack Quantity30400-
SubcategoryIGBTsMOSFETs-
TradenameBIMOSFET--
Unit Weight0.158733 oz--
Package Case--TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--TO-268
Power Max--357W
Reverse Recovery Time trr--330ns
Current Collector Ic Max--42A
Voltage Collector Emitter Breakdown Max--1700V
IGBT Type---
Current Collector Pulsed Icm--265A
Vce on Max Vge Ic--6V @ 15V, 21A
Switching Energy--3.43mJ (on), 430μJ (off)
Gate Charge--188nC
Td on off 25°C--19ns/200ns
Test Condition--850V, 21A, 1 Ohm, 15V
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXBT42N300HV IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT
IXBT42N170 IGBT Transistors BIMOSFET 1700V 75A
IXBT42N170-TRL MOSFET IXBT42N170 TRL
IXBT42N170A IGBT 1700V 42A 357W TO268
IXBT42N300HV IGBT 3000V 42A 357W TO268
IXBT42N170 IGBT Transistors BIMOSFET 1700V 75A
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