PartNumber | IXBX50N360HV | IXBX75N170 | IXBX25N250 |
Description | IGBT Transistors 3600V/125A Reverse Conducting IGBT | IGBT Transistors BIMOSFETS 1700V 200A | IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | TO-247-PLUS-HV-3 | PLUS 247-3 | TO-247-3 |
Mounting Style | Through Hole | Through Hole | Through Hole |
Series | Very High Voltage | IXBX75N170 | Very High Voltage |
Packaging | Tube | Tube | Tube |
Height | 21.4 mm | 21.34 mm | 21.34 mm |
Length | 16.2 mm | 16.13 mm | 16.13 mm |
Width | 5.1 mm | 5.21 mm | 5.21 mm |
Brand | IXYS | IXYS | IXYS |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | 0.232808 oz | 0.229281 oz | 0.056438 oz |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Tradename | - | BIMOSFET | BIMOSFET |
Configuration | - | - | Single |
Collector Emitter Voltage VCEO Max | - | - | 2.5 kV |
Collector Emitter Saturation Voltage | - | - | 3.3 V |
Maximum Gate Emitter Voltage | - | - | 20 V |
Continuous Collector Current at 25 C | - | - | 55 A |
Pd Power Dissipation | - | - | 300 W |
Continuous Collector Current Ic Max | - | - | 55 A |
Gate Emitter Leakage Current | - | - | +/- 100 nA |