PartNumber | IXDN55N120D1 | IXDN55N120 | IXDN55N120AU1 |
Description | IGBT Transistors 55 Amps 1200V | ||
Manufacturer | IXYS | - | - |
Product Category | IGBT Transistors | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Package / Case | SOT-227B-4 | - | - |
Mounting Style | SMD/SMT | - | - |
Configuration | Single Dual Emitter | - | - |
Collector Emitter Voltage VCEO Max | 1200 V | - | - |
Collector Emitter Saturation Voltage | 2.3 V | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | IXDN55N120 | - | - |
Packaging | Tube | - | - |
Continuous Collector Current Ic Max | 100 A | - | - |
Height | 9.6 mm | - | - |
Length | 38.23 mm | - | - |
Width | 25.42 mm | - | - |
Brand | IXYS | - | - |
Continuous Collector Current | 100 A | - | - |
Product Type | IGBT Transistors | - | - |
Factory Pack Quantity | 10 | - | - |
Subcategory | IGBTs | - | - |
Unit Weight | 1.058219 oz | - | - |