| PartNumber | IXFA10N80P | IXFA10N60P | IXFA10N60P-TRL |
| Description | MOSFET 10 Amps 800V 1.1 Rds | MOSFET 600V 10A | MOSFET 600V 10A |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 600 V | 600 V |
| Id Continuous Drain Current | 10 A | 10 A | 10 A |
| Rds On Drain Source Resistance | 1.1 Ohms | 740 mOhms | 740 mOhms |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 300 W | 200 W | 200 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | HiPerFET | HiPerFET | HiPerFET |
| Packaging | Tube | Tube | Reel |
| Series | IXFA10N80P | IXFA10N60P | IXFA10N60P |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | IXYS | IXYS | IXYS |
| Fall Time | 22 ns | 21 ns | 21 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 22 ns | 27 ns | 27 ns |
| Factory Pack Quantity | 50 | 50 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 62 ns | 65 ns | 21 ns |
| Typical Turn On Delay Time | 21 ns | 23 ns | 23 ns |
| Unit Weight | 0.056438 oz | 0.056438 oz | 0.081130 oz |
| Height | - | 4.5 mm | - |
| Length | - | 9.9 mm | - |
| Width | - | 9.2 mm | - |
| Forward Transconductance Min | - | 11 S | 6 S |
| Vgs th Gate Source Threshold Voltage | - | - | 5.5 V |
| Qg Gate Charge | - | - | 32 nC |