 | |  | |
| PartNumber | IXFA180N10T2 | IXFA18N60X | IXFA180N10T2-TRL |
| Description | MOSFET Trench T2 HiperFET Power MOSFET | MOSFET DISCMSFT NCH ULTRJNCTN XCLASS | MOSFET IXFA180N10T2 TRL |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | Y |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263AA-3 | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 600 V | - |
| Id Continuous Drain Current | 180 A | 18 A | - |
| Rds On Drain Source Resistance | 6 mOhms | 230 mOhms | - |
| Tradename | HiPerFET | HiPerFET | - |
| Packaging | Tube | - | Reel |
| Series | IXFA180N10 | - | TrenchT2 |
| Brand | IXYS | IXYS | IXYS |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 50 | 50 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.056438 oz | - | - |
| Number of Channels | - | 1 Channel | - |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Qg Gate Charge | - | 35 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 320 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Fall Time | - | 24 ns | - |
| Rise Time | - | 30 ns | - |
| Typical Turn Off Delay Time | - | 63 ns | - |
| Typical Turn On Delay Time | - | 20 ns | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Littelfuse |
IXFA180N10T2 | MOSFET Trench T2 HiperFET Power MOSFET | |
| IXFA18N60X | MOSFET DISCMSFT NCH ULTRJNCTN XCLASS | ||
| IXFA18N65X2 | MOSFET 650V/18A TO-263 | ||
| IXFA180N10T2-TRL | MOSFET IXFA180N10T2 TRL | ||
| IXFA180N10T2 TRL | New and Original | ||
| IXFA180N10T2TRL | IXFA180N10T2TRL | ||
| IXFA18N60X | MOSFET N-CH 600V 18A TO-263AA | ||
| IXFA180N10T2 | IGBT Transistors MOSFET Trench T2 HiperFET Power MOSFET |