PartNumber | IXFA4N100Q | IXFA4N100P | IXFA4N100P-TRL |
Description | MOSFET 4 Amps 1000V 2.8 Rds | MOSFET 4 Amps 1000V | MOSFET IXFA4N100P TRL |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | TO-263-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 1 kV | 1 kV | - |
Id Continuous Drain Current | 4 A | 4 A | - |
Rds On Drain Source Resistance | 3 Ohms | 3.3 Ohms | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 150 W | 150 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | HyperFET | HiPerFET | - |
Packaging | Tube | Tube | Reel |
Height | 4.83 mm | 4.83 mm | - |
Length | 10.41 mm | 9.65 mm | - |
Series | IXFA4N100 | IXFA4N100 | POLAR |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 9.65 mm | 10.41 mm | - |
Brand | IXYS | IXYS | IXYS |
Fall Time | 18 ns | 50 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 15 ns | 36 ns | - |
Factory Pack Quantity | 50 | 50 | 800 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 32 ns | 37 ns | - |
Typical Turn On Delay Time | 17 ns | 24 ns | - |
Unit Weight | 0.056438 oz | 0.056438 oz | - |
Vgs th Gate Source Threshold Voltage | - | 6 V | - |
Qg Gate Charge | - | 26 nC | - |
Type | - | Polar HiPerFET Power MOSFET | - |
Forward Transconductance Min | - | 1.8 S | - |