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IXFA4N1

IXFA4N100P vs IXFA4N100 vs IXFA4N100P TRL

 
PartNumberIXFA4N100PIXFA4N100IXFA4N100P TRL
DescriptionMOSFET 4 Amps 1000V
ManufacturerIXYS--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage1 kV--
Id Continuous Drain Current4 A--
Rds On Drain Source Resistance3.3 Ohms--
Vgs th Gate Source Threshold Voltage6 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge26 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation150 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameHiPerFET--
PackagingTube--
Height4.83 mm--
Length9.65 mm--
SeriesIXFA4N100--
Transistor Type1 N-Channel--
TypePolar HiPerFET Power MOSFET--
Width10.41 mm--
BrandIXYS--
Forward Transconductance Min1.8 S--
Fall Time50 ns--
Product TypeMOSFET--
Rise Time36 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time37 ns--
Typical Turn On Delay Time24 ns--
Unit Weight0.056438 oz--
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse 		IXFA4N100Q MOSFET 4 Amps 1000V 2.8 Rds
IXFA4N100P MOSFET 4 Amps 1000V
IXFA4N100P-TRL MOSFET IXFA4N100P TRL
IXFA4N100 New and Original
IXFA4N100P TRL New and Original
IXFA4N100Q-TRL MOSFET N-CH 1000V 4A TO-263
IXFA4N100PTRL New and Original
IXFA4N100QTRL New and Original
IXFA4N100Q Darlington Transistors MOSFET 4 Amps 1000V 2.8 Rds
IXFA4N100P Darlington Transistors MOSFET 4 Amps 1000V
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