| PartNumber | IXFB82N60P | IXFB82N60Q3 | IXFB80N50Q2 |
| Description | MOSFET 82 Amps 600V 0.75 Ohm Rds | MOSFET Q3Class HiPerFET Pwr MOSFET 600V/82A | MOSFET 80 Amps 500V 0.06 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | PLUS-264-3 | PLUS-264-3 | PLUS-264-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 500 V |
| Id Continuous Drain Current | 82 A | 82 A | 80 A |
| Rds On Drain Source Resistance | 75 mOhms | 75 mOhms | 60 mOhms |
| Vgs th Gate Source Threshold Voltage | 5 V | - | - |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 240 nC | 275 nC | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 1.25 kW | 1.56 kW | 960 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | HiPerFET | HiPerFET | HyperFET |
| Packaging | Tube | Tube | Tube |
| Height | 26.59 mm | - | 26.59 mm |
| Length | 20.29 mm | - | 20.29 mm |
| Series | IXFB82N60 | IXFB82N60Q3 | IXFB80N50 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | PolarHV HiPerFET Power MOSFET | - | - |
| Width | 5.31 mm | - | 5.31 mm |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 50 S | - | - |
| Fall Time | 24 ns | - | 11 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 23 ns | 300 ns | 25 ns |
| Factory Pack Quantity | 25 | 25 | 25 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 79 ns | - | 60 ns |
| Typical Turn On Delay Time | 28 ns | - | 29 ns |
| Unit Weight | 0.056438 oz | 0.056438 oz | 0.056438 oz |