PartNumber | IXFK150N30P3 | IXFK150N10 | IXFK150N15 |
Description | MOSFET N-Channel: Power MOSFET w/Fast Diode | MOSFET 150 Amps 100V | MOSFET 150 Amps 150V 0.0125 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-264-3 | TO-264-3 | TO-264-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 300 V | 100 V | 150 V |
Id Continuous Drain Current | 150 A | 150 A | 150 A |
Rds On Drain Source Resistance | 19 mOhms | 12 mOhms | 12.5 mOhms |
Configuration | Single | Single | Single |
Tradename | HiPerFET | HyperFET | HyperFET |
Packaging | Tube | Tube | Tube |
Series | IXFK150N30 | IXFK150N10 | IXFK150N15 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | IXYS | IXYS | IXYS |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 25 | 25 | 25 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.264555 oz | 0.352740 oz | 0.352740 oz |
RoHS | - | Y | Y |
Vgs Gate Source Voltage | - | - | 20 V |
Minimum Operating Temperature | - | - | - 55 C |
Maximum Operating Temperature | - | - | + 150 C |
Pd Power Dissipation | - | - | 560 W |
Channel Mode | - | - | Enhancement |
Height | - | - | 26.16 mm |
Length | - | - | 19.96 mm |
Width | - | - | 5.13 mm |
Fall Time | - | - | 45 ns |
Rise Time | - | - | 60 ns |
Typical Turn Off Delay Time | - | - | 110 ns |
Typical Turn On Delay Time | - | - | 50 ns |