IXFK17

IXFK170N10P vs IXFK170N20P vs IXFK170N10

 
PartNumberIXFK170N10PIXFK170N20PIXFK170N10
DescriptionMOSFET PolarHT HiperFET 100v, 170AMOSFET 170 Amps 200V 0.014 RdsMOSFET 170 Amps 100V
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-264-3TO-264-3TO-264-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V200 V100 V
Id Continuous Drain Current170 A170 A170 A
Rds On Drain Source Resistance9 mOhms14 mOhms10 mOhms
Vgs th Gate Source Threshold Voltage5 V5 V-
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge198 nC185 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 150 C
Pd Power Dissipation714 W1.25 kW560 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameHiPerFETHiPerFETHyperFET
PackagingTubeTubeTube
Height26.59 mm26.59 mm26.16 mm
Length20.29 mm20.29 mm19.96 mm
SeriesIXFK170N10IXFK170N20IXFK170N10
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypePolarHT HiPerFET Power MOSFETPolar Power MOSFET HiPerFET-
Width5.31 mm5.31 mm5.13 mm
BrandIXYSIXYSIXYS
Forward Transconductance Min45 S45 S-
Fall Time33 ns14 ns79 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time50 ns25 ns90 ns
Factory Pack Quantity252525
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time90 ns50 ns158 ns
Typical Turn On Delay Time35 ns40 ns40 ns
Unit Weight0.352740 oz0.352740 oz0.352740 oz
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXFK170N10P MOSFET PolarHT HiperFET 100v, 170A
IXFK170N20P MOSFET 170 Amps 200V 0.014 Rds
IXFK170N20T MOSFET 170A 200V
IXFK170N10 MOSFET 170 Amps 100V
IXFK170N20T MOSFET N-CH 200V 170A TO-264
IXFK170N25X3 MOSFET N-CH 250V 170A TO264
IXFK170N10P Darlington Transistors MOSFET PolarHT HiperFET 100v, 170A
IXFK170N10 MOSFET 170 Amps 100V
IXFK170N20P IGBT Transistors MOSFET 170 Amps 200V 0.014 Rds
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