PartNumber | IXFK170N10P | IXFK170N20P | IXFK170N10 |
Description | MOSFET PolarHT HiperFET 100v, 170A | MOSFET 170 Amps 200V 0.014 Rds | MOSFET 170 Amps 100V |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-264-3 | TO-264-3 | TO-264-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 200 V | 100 V |
Id Continuous Drain Current | 170 A | 170 A | 170 A |
Rds On Drain Source Resistance | 9 mOhms | 14 mOhms | 10 mOhms |
Vgs th Gate Source Threshold Voltage | 5 V | 5 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 198 nC | 185 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 150 C |
Pd Power Dissipation | 714 W | 1.25 kW | 560 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | HiPerFET | HiPerFET | HyperFET |
Packaging | Tube | Tube | Tube |
Height | 26.59 mm | 26.59 mm | 26.16 mm |
Length | 20.29 mm | 20.29 mm | 19.96 mm |
Series | IXFK170N10 | IXFK170N20 | IXFK170N10 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | PolarHT HiPerFET Power MOSFET | Polar Power MOSFET HiPerFET | - |
Width | 5.31 mm | 5.31 mm | 5.13 mm |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 45 S | 45 S | - |
Fall Time | 33 ns | 14 ns | 79 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 50 ns | 25 ns | 90 ns |
Factory Pack Quantity | 25 | 25 | 25 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 90 ns | 50 ns | 158 ns |
Typical Turn On Delay Time | 35 ns | 40 ns | 40 ns |
Unit Weight | 0.352740 oz | 0.352740 oz | 0.352740 oz |