PartNumber | IXFK170N20P | IXFK170N20T | IXFK170N25X3 |
Description | MOSFET 170 Amps 200V 0.014 Rds | MOSFET 170A 200V | MOSFET N-CH 250V 170A TO264 |
Manufacturer | IXYS | IXYS | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-264-3 | TO-264-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
Id Continuous Drain Current | 170 A | 170 A | - |
Rds On Drain Source Resistance | 14 mOhms | 11 mOhms | - |
Vgs th Gate Source Threshold Voltage | 5 V | 5 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 185 nC | 265 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 1.25 kW | 1.15 kW | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | HiPerFET | HiPerFET | - |
Packaging | Tube | Tube | - |
Height | 26.59 mm | 26.16 mm | - |
Length | 20.29 mm | 19.96 mm | - |
Series | IXFK170N20 | IXFK170N20 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Type | Polar Power MOSFET HiPerFET | GigaMOS Power MOSFET | - |
Width | 5.31 mm | 5.13 mm | - |
Brand | IXYS | IXYS | - |
Forward Transconductance Min | 45 S | 85 S | - |
Fall Time | 14 ns | 22 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 25 ns | 28 ns | - |
Factory Pack Quantity | 25 | 25 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 50 ns | 80 ns | - |
Typical Turn On Delay Time | 40 ns | 33 ns | - |
Unit Weight | 0.352740 oz | 0.352740 oz | - |