IXFK18

IXFK180N10 vs IXFK180N07 vs IXFK180N085

 
PartNumberIXFK180N10IXFK180N07IXFK180N085
DescriptionMOSFET 100V 180AMOSFET 180 Amps 70V 0.006 RdsMOSFET 180 Amps 85V 0.007 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-264-3TO-264-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V70 V-
Id Continuous Drain Current180 A180 A-
Rds On Drain Source Resistance8 mOhms6 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation560 W560 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameHiPerFETHiPerFETHyperFET
PackagingTubeTubeTube
Height26.16 mm26.16 mm-
Length19.96 mm19.96 mm-
SeriesIXFK180N10IXFK180N07IXFK180N085
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width5.13 mm5.13 mm-
BrandIXYSIXYS-
Forward Transconductance Min90 S90 S/55 S-
Fall Time65 ns55 ns55 ns
Product TypeMOSFETMOSFET-
Rise Time90 ns90 ns90 ns
Factory Pack Quantity2525-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time140 ns140 ns140 ns
Typical Turn On Delay Time50 ns65 ns65 ns
Unit Weight0.352740 oz0.352740 oz0.352740 oz
Package Case--TO-264-3
Pd Power Dissipation--560 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--180 A
Vds Drain Source Breakdown Voltage--85 V
Rds On Drain Source Resistance--7 mOhms
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXFK180N10 MOSFET 100V 180A
IXFK180N25T MOSFET 180A 250V
IXFK180N07 MOSFET 180 Amps 70V 0.006 Rds
IXFK180N15 New and Original
IXFK180N15P MOSFET N-CH 150V 180A TO-264
IXFK180N25T MOSFET N-CH 250V 180A TO-264
IXFK180N10 MOSFET 100V 180A
IXFK180N085 MOSFET 180 Amps 85V 0.007 Rds
IXFK180N07 MOSFET 180 Amps 70V 0.006 Rds
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