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IXFK64N60P

IXFK64N60P vs IXFK64N60P (P/B) vs IXFK64N60P3

 
PartNumberIXFK64N60PIXFK64N60P (P/B)IXFK64N60P3
DescriptionMOSFET 600V 64AIGBT Transistors MOSFET 600V 64A 0.095Ohm PolarP3 Power MOSFET
ManufacturerIXYS-IXYS
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-264-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current64 A--
Rds On Drain Source Resistance96 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1040 W--
ConfigurationSingle-Single
Channel ModeEnhancement--
TradenameHiPerFET-HyperFET
PackagingTube-Tube
Height26.16 mm--
Length19.96 mm--
SeriesIXFK64N60-IXFK64N60
Transistor Type1 N-Channel-1 N-Channel
Width5.13 mm--
BrandIXYS--
Forward Transconductance Min63 S--
Fall Time24 ns-11 ns
Product TypeMOSFET--
Rise Time23 ns-17 ns
Factory Pack Quantity25--
SubcategoryMOSFETs--
Typical Turn Off Delay Time79 ns--
Typical Turn On Delay Time28 ns--
Unit Weight0.352740 oz-0.264555 oz
Package Case--TO-264-3
Pd Power Dissipation--1.13 kW
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--64 A
Vds Drain Source Breakdown Voltage--600 V
Vgs th Gate Source Threshold Voltage--5 V
Rds On Drain Source Resistance--95 mOhms
Qg Gate Charge--145 nC
Forward Transconductance Min--60 S 36 S
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse 		IXFK64N60P MOSFET 600V 64A
IXFK64N60P (P/B) New and Original
IXFK64N60P IGBT Transistors MOSFET 600V 64A
IXFK64N60P3 IGBT Transistors MOSFET 600V 64A 0.095Ohm PolarP3 Power MOSFET
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