PartNumber | IXFK80N50Q3 | IXFK80N50P | IXFK80N15Q |
Description | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/80A | MOSFET 500V 80A | MOSFET 80 Amps 150V 0.0225 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-264-3 | TO-264-3 | TO-264-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 500 V | 500 V | 150 V |
Id Continuous Drain Current | 80 A | 80 A | 80 A |
Rds On Drain Source Resistance | 65 mOhms | 65 mOhms | 22.5 mOhms |
Vgs Gate Source Voltage | 30 V | 30 V | 20 V |
Qg Gate Charge | 200 nC | - | - |
Pd Power Dissipation | 1.25 kW | 1040 W | 360 W |
Configuration | Single | Single | Single |
Tradename | HiPerFET | HiPerFET | HyperFET |
Packaging | Tube | Tube | Tube |
Series | IXFK80N50 | IXFK80N50 | IXFK80N15 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | IXYS | IXYS | IXYS |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 250 ns | 27 ns | 55 ns |
Factory Pack Quantity | 25 | 25 | 25 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.264555 oz | 0.352740 oz | 0.352740 oz |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Channel Mode | - | Enhancement | Enhancement |
Height | - | 26.16 mm | 26.16 mm |
Length | - | 19.96 mm | 19.96 mm |
Width | - | 5.13 mm | 5.13 mm |
Forward Transconductance Min | - | 70 S | - |
Fall Time | - | 16 ns | 20 ns |
Typical Turn Off Delay Time | - | 70 ns | 68 ns |
Typical Turn On Delay Time | - | 25 ns | 30 ns |