PartNumber | IXFN132N50P3 | IXFN130N90SK | IXFN130N30 |
Description | MOSFET 500V 112A 0.039Ohm PolarP3 Power MOSFET | MOSFET SICARBIDE-DISCRETE MOSFET (MIN | MOSFET 300V 130A |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | - | - |
Mounting Style | Chassis Mount | - | - |
Package / Case | SOT-227-4 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 500 V | - | - |
Id Continuous Drain Current | 112 A | - | - |
Rds On Drain Source Resistance | 39 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 5 V | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Qg Gate Charge | 250 nC | - | - |
Pd Power Dissipation | 1.5 kW | - | - |
Configuration | Single | - | - |
Tradename | HiPerFET | HiPerFET | - |
Packaging | Tube | Tube | - |
Series | IXFN132N50 | - | - |
Transistor Type | 1 N-Channel | - | - |
Brand | IXYS | IXYS | - |
Forward Transconductance Min | 115 S, 68 S | - | - |
Fall Time | 8 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 9 ns | - | - |
Factory Pack Quantity | 10 | 10 | - |
Subcategory | MOSFETs | MOSFETs | - |
Unit Weight | 1.058219 oz | - | - |