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| PartNumber | IXFN132N50P3 | IXFN130N90SK | IXFN130N30 |
| Description | MOSFET 500V 112A 0.039Ohm PolarP3 Power MOSFET | MOSFET SICARBIDE-DISCRETE MOSFET (MIN | MOSFET 300V 130A |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | - | - |
| Mounting Style | Chassis Mount | - | - |
| Package / Case | SOT-227-4 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 112 A | - | - |
| Rds On Drain Source Resistance | 39 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 5 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 250 nC | - | - |
| Pd Power Dissipation | 1.5 kW | - | - |
| Configuration | Single | - | - |
| Tradename | HiPerFET | HiPerFET | - |
| Packaging | Tube | Tube | - |
| Series | IXFN132N50 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | IXYS | IXYS | - |
| Forward Transconductance Min | 115 S, 68 S | - | - |
| Fall Time | 8 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 9 ns | - | - |
| Factory Pack Quantity | 10 | 10 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 1.058219 oz | - | - |