IXFN9

IXFN90N85X vs IXFN90N30 vs IXFN90N170SK

 
PartNumberIXFN90N85XIXFN90N30IXFN90N170SK
DescriptionMOSFET 850V/90A Ultra Junction X-ClassMOSFET 90 Amps 300V 0.033 RdsMOSFET SICARBIDE-DISCRETE MOSFET (MIN
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSi-
Mounting StyleChassis MountChassis Mount-
Package / CaseSOT-227-4SOT-227-4-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage850 V300 V-
Id Continuous Drain Current90 A90 A-
Rds On Drain Source Resistance41 mOhms33 mOhms-
Vgs th Gate Source Threshold Voltage3.5 V4 V-
Vgs Gate Source Voltage30 V20 V-
Qg Gate Charge340 nC360 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.2 kW560 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameHiPerFETHyperFET0
PackagingTubeTubeTube
SeriesX-ClassIXFN90N30-
Transistor Type1 N-Channel1 N-Channel-
BrandIXYSIXYSIXYS
Forward Transconductance Min37 S40 S-
Fall Time8 ns40 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time20 ns55 ns-
Factory Pack Quantity101010
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time126 ns100 ns-
Typical Turn On Delay Time50 ns42 ns-
Unit Weight1.058219 oz1.058219 oz-
Height-12.22 mm-
Length-38.23 mm-
Type-HiPerFET Power MOSFET-
Width-25.42 mm-
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXFN94N50P2 Discrete Semiconductor Modules DiscMSFT NChHiPerFETPolar2 SOT-227B(mini
IXFN90N85X MOSFET 850V/90A Ultra Junction X-Class
IXFN90N30 MOSFET 90 Amps 300V 0.033 Rds
IXFN90N170SK MOSFET SICARBIDE-DISCRETE MOSFET (MIN
IXFN90N30 MOSFET N-CH 300V 90A SOT-227B
IXFN90N85X 850V/90A ULT JUNC X-C HIPERFET P
IXFN94N50P2 500V POLAR2 HIPERFETS
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