PartNumber | IXFP130N15X3 | IXFP130N10T | IXFP130N10T2 |
Description | MOSFET DISCMSFT NCHULTRJNCTX3CLASS | MOSFET 130 Amps 100V | IGBT Transistors MOSFET Trench T2 HiperFET Power MOSFET |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Tradename | HiPerFET | HiPerFET | TrenchT2 HiperFET |
Packaging | Tube | Tube | Tube |
Brand | IXYS | IXYS | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 50 | 50 | - |
Subcategory | MOSFETs | MOSFETs | - |
Technology | - | Si | Si |
Mounting Style | - | Through Hole | Through Hole |
Package / Case | - | TO-220-3 | - |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 100 V | - |
Id Continuous Drain Current | - | 130 A | - |
Rds On Drain Source Resistance | - | 9.1 mOhms | - |
Series | - | IXFP130N10 | IXFP130N10 |
Unit Weight | - | 0.012346 oz | 0.012346 oz |
Package Case | - | - | TO-220-3 |
Pd Power Dissipation | - | - | 360 W |
Maximum Operating Temperature | - | - | + 175 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 25 ns |
Rise Time | - | - | 38 ns |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 130 A |
Vds Drain Source Breakdown Voltage | - | - | 100 V |
Vgs th Gate Source Threshold Voltage | - | - | 4.5 V |
Rds On Drain Source Resistance | - | - | 9.1 mOhms |
Typical Turn Off Delay Time | - | - | 24 ns |
Typical Turn On Delay Time | - | - | 16 ns |
Qg Gate Charge | - | - | 130 nC |
Forward Transconductance Min | - | - | 45 S |
Channel Mode | - | - | Enhancement |