IXFP6

IXFP6N120P vs IXFP60N25X3M vs IXFP60N25X3

 
PartNumberIXFP6N120PIXFP60N25X3MIXFP60N25X3
DescriptionMOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6AMOSFET 250V/60A Ultra Junct ion X3-Class MOSFETMOSFET N-CH 250V 60A TO220AB
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220AB-3-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage1.2 kV250 V-
Id Continuous Drain Current6 A60 A-
Rds On Drain Source Resistance2.75 Ohms19 mOhms-
Vgs th Gate Source Threshold Voltage5 V2.5 V-
Vgs Gate Source Voltage30 V20 V-
Qg Gate Charge92 nC50 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation250 W320 W-
Channel ModeEnhancementEnhancement-
TradenameHiPerFETHiPerFET-
PackagingTubeTube-
Height16 mm--
Length10.66 mm--
SeriesIXFP6N120X3-Class-
TypePolar HiPerFET Power MOSFET--
Width4.83 mm--
BrandIXYSIXYS-
Forward Transconductance Min3 S30 S-
Fall Time14 ns7 ns-
Product TypeMOSFETMOSFET-
Rise Time11 ns10 ns-
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time60 ns62 ns-
Typical Turn On Delay Time24 ns18 ns-
Unit Weight0.012346 oz0.063493 oz-
Number of Channels-1 Channel-
Configuration-Single-
Transistor Type-1 N-Channel-
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXFP6N120P MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A
IXFP60N25X3M MOSFET 250V/60A Ultra Junct ion X3-Class MOSFET
IXFP60N25X3 MOSFET N-CH 250V 60A TO220AB
IXFP60N25X3M MOSFET N-CH 250V 60A TO220AB
IXFP6N120P Darlington Transistors MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A
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