IXFR10

IXFR102N30P vs IXFR100N25 vs IXFR10N100F

 
PartNumberIXFR102N30PIXFR100N25IXFR10N100F
DescriptionMOSFET 54 Amps 300V 0.033 RdsMOSFET 87 Amps 250V 0.027 Rds
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage300 V250 V-
Id Continuous Drain Current60 A87 A-
Rds On Drain Source Resistance36 mOhms27 mOhms-
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge224 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation250 W400 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameHiPerFETHyperFET-
PackagingTubeTube-
Height21.34 mm21.34 mm-
Length16.13 mm16.13 mm-
SeriesIXFR102N30IXFR100N25-
Transistor Type1 N-Channel1 N-Channel-
TypePolarHT HiPerFET Power MOSFET--
Width5.21 mm5.21 mm-
BrandIXYSIXYS-
Forward Transconductance Min45 S--
Fall Time30 ns40 ns-
Product TypeMOSFETMOSFET-
Rise Time28 ns55 ns-
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time130 ns110 ns-
Typical Turn On Delay Time30 ns42 ns-
Unit Weight0.056438 oz0.056438 oz-
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXFR102N30P MOSFET 54 Amps 300V 0.033 Rds
IXFR100N25 MOSFET 87 Amps 250V 0.027 Rds
IXFR10N100Q MOSFET MOSFET w/FAST Intrinsic Diode
IXFR10N100F New and Original
IXFR100N25 MOSFET 87 Amps 250V 0.027 Rds
IXFR102N30P MOSFET 54 Amps 300V 0.033 Rds
IXFR10N100Q MOSFET MOSFET w/FAST Intrinsic Diode
Top