PartNumber | IXFR200N10P | IXFR20N100P | IXFR20N120P |
Description | MOSFET 133 Amps 100V 0.0075 Rds | MOSFET 20 Amps 1000V 1 Rds | MOSFET 26 Amps 1200V 1 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 1 kV | 1.2 kV |
Id Continuous Drain Current | 133 A | 11 A | 13 A |
Rds On Drain Source Resistance | 9 mOhms | 640 mOhms | 630 mOhms |
Vgs th Gate Source Threshold Voltage | 5 V | 6.5 V | - |
Vgs Gate Source Voltage | 20 V | 30 V | 30 V |
Qg Gate Charge | 235 nC | 126 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
Pd Power Dissipation | 300 W | 230 W | 290 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | HiPerFET | HiPerFET | HiPerFET |
Packaging | Tube | Tube | Tube |
Height | 21.34 mm | 21.34 mm | 21.34 mm |
Length | 16.13 mm | 16.13 mm | 16.13 mm |
Series | IXFR200N10 | IXFR20N100 | IXFR20N120 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | Polar HiPerFET Power MOSFET | Polar Power MOSFET HiPerFET | - |
Width | 5.21 mm | 5.21 mm | 5.21 mm |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 60 S | 8 S | - |
Fall Time | 90 ns | 45 ns | 70 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 35 ns | 37 ns | 45 ns |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 150 ns | 56 ns | 72 ns |
Typical Turn On Delay Time | 30 ns | 40 ns | 49 ns |
Unit Weight | 0.056438 oz | 0.056438 oz | 0.056438 oz |