IXFT30N5

IXFT30N50P vs IXFT30N50Q vs IXFT30N50

 
PartNumberIXFT30N50PIXFT30N50QIXFT30N50
DescriptionMOSFET 500V 30AMOSFET 30 Amps 500V 0.16 RdsMOSFET 30 Amps 500V 0.16 Rds
ManufacturerIXYSIXYS-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-268-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current30 A--
Rds On Drain Source Resistance200 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation460 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameHiPerFET--
PackagingTubeTube-
Height5.1 mm--
Length16.05 mm--
SeriesIXFT30N50IXFT30N50-
Transistor Type1 N-Channel1 N-Channel-
Width14 mm--
BrandIXYS--
Forward Transconductance Min27 S--
Fall Time24 ns20 ns-
Product TypeMOSFET--
Rise Time24 ns42 ns-
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time82 ns75 ns-
Typical Turn On Delay Time25 ns35 ns-
Unit Weight0.158733 oz0.158733 oz-
Package Case-TO-268-3-
Pd Power Dissipation-360 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-30 A-
Vds Drain Source Breakdown Voltage-500 V-
Rds On Drain Source Resistance-160 mOhms-
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXFT30N50P MOSFET 500V 30A
IXFT30N50Q3 MOSFET Q3Class HiPerFET Pwr MOSFET 500V/30A
IXFT30N50Q3 Darlington Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 500V/30A
IXFT30N50Q MOSFET 30 Amps 500V 0.16 Rds
IXFT30N50 MOSFET 30 Amps 500V 0.16 Rds
IXFT30N50P MOSFET 500V 30A
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