PartNumber | IXFT50N50P3 | IXFT50N20 | IXFT50N30Q3 |
Description | MOSFET N-Channel: Power MOSFET w/Fast Diode | MOSFET 50 Amps 200V | MOSFET Q3Class HiPerFET Pwr MOSFET 300V/50A |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-268-3 | TO-268-3 | TO-268-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 500 V | 200 V | 300 V |
Id Continuous Drain Current | 50 A | 50 A | 50 A |
Rds On Drain Source Resistance | 125 mOhms | 45 mOhms | 80 mOhms |
Configuration | Single | Single | Single |
Tradename | HyperFET | - | HiPerFET |
Packaging | Tube | Tube | Tube |
Series | IXFT50N50 | IXFT50N20 | IXFT50N30 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | IXYS | IXYS | IXYS |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.229281 oz | 0.158733 oz | 0.229281 oz |
RoHS | - | Y | Y |
Vgs Gate Source Voltage | - | 20 V | 30 V |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 300 W | 690 W |
Channel Mode | - | Enhancement | - |
Height | - | 5.1 mm | - |
Length | - | 16.05 mm | - |
Width | - | 14 mm | - |
Fall Time | - | 16 ns | - |
Rise Time | - | 15 ns | 250 ns |
Typical Turn Off Delay Time | - | 72 ns | - |
Typical Turn On Delay Time | - | 18 ns | - |
Qg Gate Charge | - | - | 65 nC |