PartNumber | IXGA30N120B3 | IXGA30N120B3-TRL | IXGA30N120B3TRL |
Description | IGBT Transistors GenX3 1200V IGBT | IGBT Transistors IXGA30N120B3 TRL | |
Manufacturer | IXYS | IXYS | - |
Product Category | IGBT Transistors | IGBT Transistors | - |
RoHS | Y | Y | - |
Technology | Si | - | - |
Package / Case | TO-263-3 | - | - |
Mounting Style | SMD/SMT | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 1.2 kV | - | - |
Collector Emitter Saturation Voltage | 2.96 V | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Continuous Collector Current at 25 C | 60 A | - | - |
Pd Power Dissipation | 300 W | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | IXGA30N120 | - | - |
Packaging | Tube | Reel | - |
Continuous Collector Current Ic Max | 150 A | - | - |
Height | 4.83 mm | - | - |
Length | 9.65 mm | - | - |
Operating Temperature Range | - 55 C to + 150 C | - | - |
Width | 10.41 mm | - | - |
Brand | IXYS | IXYS | - |
Continuous Collector Current | 60 A | - | - |
Gate Emitter Leakage Current | 100 nA | - | - |
Product Type | IGBT Transistors | IGBT Transistors | - |
Factory Pack Quantity | 50 | 800 | - |
Subcategory | IGBTs | IGBTs | - |
Tradename | GenX3 | GenX3 | - |
Unit Weight | 0.068654 oz | - | - |