 |  | |
| PartNumber | IXGN200N60B3 | IXGN200N170 |
| Description | IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 200A | IGBT Transistors DISC IGBT NPT-HIVOLTAGE (MINI |
| Manufacturer | IXYS | IXYS |
| Product Category | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y |
| Technology | Si | - |
| Package / Case | SOT-227B-4 | - |
| Mounting Style | SMD/SMT | - |
| Configuration | Single | - |
| Collector Emitter Voltage VCEO Max | 600 V | - |
| Collector Emitter Saturation Voltage | 1.35 V | - |
| Maximum Gate Emitter Voltage | 20 V | - |
| Continuous Collector Current at 25 C | 300 A | - |
| Pd Power Dissipation | 830 W | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Series | IXGN200N60 | - |
| Packaging | Tube | Tube |
| Continuous Collector Current Ic Max | 1.2 kA | - |
| Height | 9.6 mm | - |
| Length | 38.23 mm | - |
| Operating Temperature Range | - 55 C to + 150 C | - |
| Width | 25.42 mm | - |
| Brand | IXYS | IXYS |
| Continuous Collector Current | 300 A | - |
| Gate Emitter Leakage Current | 100 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 10 | 10 |
| Subcategory | IGBTs | IGBTs |
| Tradename | GenX3 | 0 |
| Unit Weight | 1.058219 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Littelfuse |
IXGN200N60B3 | IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 200A | |
| IXGN200N170 | IGBT Transistors DISC IGBT NPT-HIVOLTAGE (MINI | ||
| IXGN200N170 | IGBT | ||
| IXGN200N60B3 | IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 200A | ||
| IXGN200N60 | IGBT 300A 600V SOT-227B | ||
| IXGN200N60A | IGBT 300A 600V SOT-227B | ||
| IXGN200N60A2 | IGBT 600V 200A SOT-227B | ||
| IXGN200N60B | IGBT FAST 600V 200A SOT-227B |