PartNumber | IXGT60N60C3D1 | IXGT64N60B3 | IXGT64N60B3-TRL |
Description | IGBT Transistors 60 Amps 600V | IGBT Transistors DISC IGBT PT-MID FREQUENCY | IGBT Transistors IXGT64N60B3 TRL |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | - | Y |
Technology | Si | Si | Si |
Series | IXGT60N60 | - | - |
Packaging | Tube | Tube | Reel |
Brand | IXYS | IXYS | IXYS |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 30 | 30 | 400 |
Subcategory | IGBTs | IGBTs | IGBTs |
Package / Case | - | TO-268-3 | TO-268-3 |
Mounting Style | - | SMD/SMT | SMD/SMT |
Configuration | - | Single | Single |
Collector Emitter Voltage VCEO Max | - | 600 V | 600 V |
Collector Emitter Saturation Voltage | - | 1.59 V | 1.8 V |
Maximum Gate Emitter Voltage | - | 20 V | 20 V |
Continuous Collector Current at 25 C | - | 64 A | 400 A |
Pd Power Dissipation | - | 460 W | 460 W |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Continuous Collector Current Ic Max | - | 400 A | 64 A |
Gate Emitter Leakage Current | - | 100 nA | - |